'HBM4' 부터 방향성 차이를 보이는 삼성,하닉,마이크론

<p style="text-align: left;"></p><div class="figure-img" data-ke-type="image" data-ke-style="alignCenter" data-ke-mobilestyle="widthOrigin"><img src="https://t1.daumcdn.net/cafeattach/1YmK3/612e43ae6634e098b83485a77247c5fa9964a227" class="txc-image" data-img-src="https://t1.daumcdn.net/cafeattach/1YmK3/612e43ae6634e098b83485a77247c5fa9964a227" data-origin-width="2880" data-origin-height="2880"></div><p style="text-align: center;"><b>스펙이 고도화 됨에 따라,<br>'<span style="color: #EF5369;">HBM4</span>'부터는 하부 '<span style="color: #EF5369;">로직다이</span>' 에서<br>메모리(D램)공정이 아닌 '<span style="color: #EF5369;">파운드리 공정</span>'이 적용됨<br><br>삼성은 당연히 파운드리 '<span style="color: #EF5369;">자사 4나노</span>' 공정,<br>SK 하이닉스는 '<span style="color: #EF5369;">TSMC 12나노</span>' 공정 적용<br>마이크론은 '<span style="color: #EF5369;">메모리(D램)공정</span>' 유지중<br><br></b></p><div class="figure-img" data-ke-type="image" data-ke-style="alignCenter" data-ke-mobilestyle="widthOrigin"><img src="https://t1.daumcdn.net/cafeattach/1YmK3/c7b4527e87980be6e78a4e4902b51a1118e8a6bf" class="txc-image" data-img-src="https://t1.daumcdn.net/cafeattach/1YmK3/c7b4527e87980be6e78a4e4902b51a1118e8a6bf" data-origin-width="472" data-origin-height="482"></div><div class="figure-img" data-ke-type="image" data-ke-style="alignCenter" data-ke-mobilestyle="widthOrigin"><img src="https://t1.daumcdn.net/cafeattach/1YmK3/bf90f7f47df5c82fbe69fe055686eae559a45228" class="txc-image" data-img-src="https://t1.daumcdn.net/cafeattach/1YmK3/bf90f7f47df5c82fbe69fe055686eae559a45228" data-origin-width="1080" data-origin-height="1350"></div><div class="figure-img" data-ke-type="image" data-ke-style="alignCenter" data-ke-mobilestyle="widthOrigin"><img src="https://t1.daumcdn.net/cafeattach/1YmK3/aa5725a1ef71ef517274025ce56f92a0487e6dae" class="txc-image" data-img-src="https://t1.daumcdn.net/cafeattach/1YmK3/aa5725a1ef71ef517274025ce56f92a0487e6dae" data-origin-width="593" data-origin-height="395"></div>